Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature = Електролюмінесценція гетероструктур InGaN / GaN при зворотному зміщенні та азотній температурі

Abstract

The electroluminescence spectra at reverse biases in LED InGaN/GaN heterostructures at liquid nitrogen temperatures were studied. At the reverse bias and T = 77 K, avalanche microplasmas breakdowns were observed. Electroluminescence spectra demonstrate two peaks caused by the recombination of carriers in different parts of the structure (quantum well and p-GaN layer).The temperature narrowing the half-width and the shift of еlectroluminescence spectra peaks inherent to microplasmas were observed.